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| SMD Type Dual N & P-Channel, Logic Level MOSFET KQS4900 Features N-Channel 1.3 A, 60 V RDS(ON) = 0.55 RDS(ON) = 0.65 P-Channel -0.3 A, -300V RDS(ON) = 15.5 RDS(ON) = 16 @ VGS =- 10V @ VGS =-5V @ VGS = 10 V @ VGS =5V IC IC Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.6 nC) Fast switching Improved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Ta = 25 Ta = 70 Drain Current Pulsed Peak Diode Recovery dv/dt Power Dissipation for Single Operation Ta = 25 Ta = 70 Operating and Storage Temperature Thermal Resistance Junction to Ambient TJ, TSTG R JA Symbol VDSS VGS ID IDM dv/dt PD N-Channel 60 20 1.3 0.82 5.2 7 2 1.3 P- Channel -300 Unit V V -0.3 -0.19 -1.2 4.5 A A V/ns W *1 -55 to 150 62.5 /W *1Repetitive Rating : Pulse width limited by maximum junction temperature www.kexin.com.cn 1 SMD Type KQS4900 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 VDS = 60V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 48 V, TC = 55 VDS = -300 V, VGS = 0 V VDS = -240 V, TC = 55 Gate-Body Leakage Gate Threshold Voltage Static Drain-Source On-Resistance Static Drain-Source On-Resistance IGSS VGS(th) RDS(on) RDS(on) VGS = VGS = 20V, VDS = 0 V 20 V, VDS = 0 V A A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch * P-Ch N-Ch P-Ch P-Channel VDD = -150 V, ID = -0.3 A,RG=25 Turn-Off Fall Time Total Gate Charge tf Qg N-Channel VDS =48V,ID=1.3A,VGS=5V * * N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage * Pulse Test : Pulse width Qgd IS VSD VGS = 0 V, IS = 1.3A VGS = 0 V, IS = -0.3A 2% VDS=-240V,ID=-30.3A,VGS=-5V * P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 -1.0 0.39 0.46 11.2 11.4 1.7 0.6 5.7 10 21 25 11 35 17 47 1.6 3.6 0.28 0.42 0.82 2.1 1.3 -0.3 1.5 -4.0 21 30 50 60 32 80 45 105 2.1 4.7 Min 60 -300 1 10 -1 -10 100 100 1.95 -1.95 0.55 0.65 15.5 16 Typ Max IC IC Unit V A A nA V VDS = 4V, ID = 20mA VDS = 4V, ID = -20mA VGS = 10 V, ID =0.65A VGS = 5 V, ID = 0.65A VGS = -10 V, ID =-0.15 A VGS = -5 V, ID =-0.15 A VDS = 10V, ID = 0.65A VDS = -10V, ID = -0.15A Forward Transconductance gFS S Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) N-Channel VDD = 30 V, ID = 1.3 A,RG=25 ns ns ns ns nC Gate-Source Charge Qgs nC nC A V 300 s, Duty cycle 2 www.kexin.com.cn |
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